Описание

Ключевые возможности и технические характеристики
  • Insertion Loss:0.3 dB Typ. @ 9 GHz0.6 dB Typ. @ 20 GHz
  • Port match:S11 and S22: <20 dB Typ
  • P–1dB:26.5 dBm Typ. @ 9 GHz25 dBm Typ. @ 20 GHz
  • Distortion:SHI: >100 dBm Typ.THI: +44 dBm Typ. @ 9 GHz TOI:+45 dBm Typ. @ 9 GHz+43 dBm Typ. @ 20 GHz
ОписаниеThe 1GG5-8042 (TC626) is a 26.5 GHz GaAs integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients and ESD. The circuit contains Planar-Doped-Barrier (PDB) diodes with integrated matching networks and is fabricated with the MB6A integrated diode process. The barrier height of each diode element and the number of diode elements in each stack are optimized for low distortion when Pin 25 dBm.''